Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

G. Wang, S. Long, Z. Yu, M. Zhang, T. Ye, Y. Li, D. Xu, H. Lv, Q. Liu, M. Wang, X. Xu, H. Liu, B. Yang, J.Suñé, and M. Liu. 
Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation
Applied Physics Letters 106 (9), 092103 (2015).

https://www.researchgate.net/publication/276525006_Improving_resistance_uniformity_and_endurance_of_resistive_switching_memory_by_accurately_controlling_the_stress_time_of_pulse_program_operation