Simulation of thermal reset transitions in resistive switching memories including quantum effects

A. Villena, M. B. González, F. Jiménez-Molinos, F. Campabadal, J. B. Roldán, J. Suñé, E. Romera, and E. Miranda
Simulation of thermal reset transitions in resistive switching memories including quantum effects
Journal of Applied Physics 115, 214504 (2014)

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

Calka, Pauline; Sowinska, Malgorzata; Bertaud, Thomas; Walczyk, Damian; Dabrowski, Jarek; Zaumseil, Peter; Walczyk, Christian; Gloskovskii, Andrei; Cartoixà, Xavier; Sune, Jordi; Schroeder, Thomas
Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.
ACS Appl. Mat. Int. 6 (7), 5056 (2014).

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Lian, Xiaojuan; Cartoixà, Xavier; Miranda, Enrique; Perniola, Luca; Rurali, Riccardo; Long, Shibing; Liu, Ming and Suñé, Jordi
Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices
Journal of Appl. Phys. 115 (24), 244507 (2014)

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Assessing the spatial correlation and conduction state of breakdown spot patterns in Pt/HfO2/Pt structures using transient infrared thermography

E. Miranda, M. Riccio, G. De Falco, J. Blasco, J. Suñé and A. Irace
Assessing the spatial correlation and conduction state of breakdown spot patterns in Pt/HfO2/Pt structures using transient infrared thermography
Journal of Applied Physics 115, 174502 (2014)

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Simulation of thermal reset transitions in resistive switching memories including quantum effects

M. A. Villena, M. B. González, F. Jiménez-Molinos, F. Campabadal, J. B. Roldán, J. Suñé, E. Romera, and E. Miranda
Simulation of thermal reset transitions in resistive switching memories including quantum effects
Journal of Applied Physics 115, 214504 (2014)

Read More