Reversible Switching of Superconductor-Insulator Transition for Green Electronic Devices

Research Partners: 1 (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC))

Funding Agency / Institution: MINECO / Frontier Interdisciplinary Projects (FUNMAT-FIP-2018)  

Period: 1 year (1/9/2018-31/12/2019)

Project coordinator: Anna Palau, Narcís Mestres (ICMAB)

Research team members: Anna Palau, Narcís Mestres, Alejandro Fernández, Jordi Alcalá

Total funding: 59.982,30 €

Project Objectives


Memristive devices are attracting a great attention for memory, logic and sensing applications due to their simple structure, high density integration, low-power consumption, and fast operation. In particular, multi-terminal structures controlled by active gates would certainly provide novel concepts for reconfigurable electronic systems with engineered functionality. Strongly correlated metal oxides showing metal insulating transitions (MIT) appear as particularly interesting materials for future memristive devices, with large resistance variations, that may be induced with small carrier concentration modulations, driven by an electric field.

The ability to continuously tune the electrical resistance, as well as to obtain high nonlinearly behaviour, positions them uniquely as an effective way to mimic neuromorphic devices. In these systems, strong electron interactions induce charge localization, via splitting of the partial filled electronic band into one empty band and one filled band, driving the material to the insulating state. The competition between carrier localization and delocalization, that may be tuned either by controlling the bandwidth (by cation substitution, pressure, strain, or temperature) or the band-filling (by electrostatic or electro-chemical doping) drives the transition between metallic and insulating states.

The objective of this project is to explore the potential of reversible field-induced metal-insulator transition (MIT) and Superconducting-insulator-transition (SIT) in strongly-correlated metallic cuprates (YBa2Cu3O7-δ) for the design of multi-terminal memristive devices. The key advantage of these materials is the possibility to homogeneously modulate the oxygen vacancy diffusion not only in a confined filament or interface, as observed in widely explored insulating strongly correlated oxides, but also toward the whole film thickness, thus providing the basis for the design of robust, homogeneous and flexible transistor-like devices.