PANACHE

Pilot line for Advanced Nonvolatile memory technologies for Automotive microControllers, High security applications and general electronics

 

Research Partners: 24 (Universitat Autònoma de Barcelona +23)

Funding Agency / Institution: European Comission (JU: ENIAC)

Period: 4 years (1/1/2014-31/12/2017)

General Project coordinator: Dominique Gourbier (STMicroelectronics, France)

UAB Local project coordinator: Jordi Suñé

Research team members: Enrique Miranda, Xavier Saura, Julio Blasco, Santi Tous, Alberto Rodríguez-Fernández, Jordi Suñé

Total funding: 357.114 €


 

 

Project objectives

The PANACHE project objective is to set-up a pilot line for embedded Flash technology design and manufacturing platform for the prototyping of innovative μcontrollers in Europe.

The current 40nm technology platform as well as the already defined 55nm technology platform will be developed and consolidated in order to build a solid manufacturing platform on these technology nodes.

The project will also extend to build the basic blocks of the technology node after 40nm; with the ambition to achieve a prototyping maturity for a new BEOL based non-volatile memory architecture suitable with the 28 nm node. To achieve this goal of generating high value added semiconductor circuits in Europe in a breakthrough leading edge technology the project will deploy all the necessary activities to bring a new technology to an early industrial maturity stage. These activities encompass such developments as: technology enhancements for various specific application requirements such as wide temperature range and reliability, high security requests, high flexibility…, design enablement allowing first time silicon success, prototyping demonstrator products in the different application areas: Automotive, Consumer/Industrial, Secure and Medical, insuring reliability of technology and designs.

In this context, the UAB research team will aim at improving the physics-based understanding of resistive emerging two-terminal memories (RRAM). The project aims at understanding and modeling the conduction properties of filamentary conduction and to link the electrical measurements to the microstructure of the filament. Understanding and modeling the SET and RESET processes, including the statistical variability under different switching modes is also our target. The UAB group will also focus on improving the understanding of RRAM performance at different levels of power consumption (related to different sizes of the conducting filaments) so that exploration of 1T/1R structures/data would be most valuable.

 

Results/Publications

 

X. Lian, X. Cartoixà, E. Miranda, L. Perniola, R. Rurali, S. Long, M. Liu and J. Suñé,  Multi-scale Quantum Point Contact model for filamentary conduction in RRAM devices,  J. Appl. Phys. vol. 115, 244507 (2014)

J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda (Introductory Invited Paper)

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films, Microelectronics Reliability 55 (2015) 1–14

J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda (Introductory Invited Paper), Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films, Microelectronics Reliability 55 (2015) 1–14

E. Miranda, A. Mehonic, J. Blasco, J. Suñé, and A.J. Kenyon, Multiple Diode-Like Conduction in Resistive Switching SiOx-based MIM Devices, IEEE Transaction on Nanotechnology, 14 (2015) pp. 15 – 17

P. Lorenzi, R. Rao, F. Irrera, J. Suñé and E. Miranda, “A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures”, Appl. Phys. Lett. 107, 113507 (2015)

E. Miranda, B. Hudec, J. Suñe, K. Frohlich “Model for the Current–Voltage Characteristic of Resistive Switches Based on Recursive Hysteretic Operators”, IEEE Electron Device Letters 36, 944-946 (2015)