ALDSIGRAF

Fabrication and characterization of ALD high-k dielectric layers deposited on silicon and graphene

Research Partners: IMB-CNM (CSIC) and Universidad de Valladolid

Funding Agency / Institution: Ministerio de Economía y Competitividad.

Period: 4 years (1/1/2012-31/12/2014)

Project coordinator: Helena Castán (Universidad de Valladolid)

Project coordinator of IMB-CNM subproject: Francesca Campabadal

Research team members: María Cruz Acero, Mireia Bargalló González, Oihane Beldarrain, José Calvo, Joan Marc Rafí, Miguel Zabala, Francesca Campabadal.

Total funding: 95.382€


 

Project objectives

The main purpose of this project is to advance in the scientific and technological understanding of thin films of high-k dielectrics grown by Atomic Layer Deposition (ALD) for microelectronic devices applications. This project is organized in two lines:

(1) To continue and extend the activity initiated in a previous project in which two aspects were covered: one technological related to the development of the ALD process to deposit thin high-k dielectric layers with suitable electrical characteristics for their use as gate dielectrics in MOS transistors, and a more scientific-oriented aspect corresponding to the electrical characterization and study of these layers in terms of their degradation and reliability under electric stress and radiation environments, thus determining the mechanisms governing their performance and degradation, which arises as a challenge for their use in future integrated circuits. In this new proposal we want to introduce some new features in ALD process: Use of Rapid Thermal Processing (RTP) instead of conventional furnace treatments, application of RTO techniques (Rapid Thermal Oxidation), new metal gate alternative to aluminum (W, Cr, Pt, Polysilicon,…), and layer engineering including nanolaminates of Al2O3 and HfO2, and incorporating titanium oxide layers, not only as MOS gate dielectric but also as a suitable material for “Switching Resistors” memories.

(2) In addition, the use high-k dielectrics layers grown by ALD for new applications such as microsensors and graphene-based electronic devices will be studied. Technologies to deposit high-k dielectrics on micro- and nanostructured substrates will be developed, and the use of ALD high-k dielectric layers for silicon micromechanization manufacturing of nanometric-scale sensors and actuators, as well as for passivation and encapsulation will be evaluated.

This project proposal is presented as a coordination of two subprojects: one more focused on the study and characterization of the electrical properties of the deposited layers by using advanced characterization techniques, and also in the ALD deposition on graphene substrates (UVA); and the other dealing primarily with the technology of ALD deposition of the high-k dielectric layers on silicon substrates (IMB-CNM)

The specific objectives proposed in this project are:

1. Study of the impact of pre- and post-deposition processing on ALD high-k dielectric films.

2. Deposition of ALD layers on structured silicon substrates and study of its suitability for applications in microsystems.

3. Study of the electrical characteristics of the thin high-k dielectric layers deposited by ALD, using advanced characterization techniques

4. Study of the radiation effects on the thin high-k dielectric layers deposited by ALD.

5. Development of technologies ALD on graphene.

 

Results/Publications

 

L. Sambuco Salomone, F. Campabadal, and A. Faigón. Electron trapping in amorphous Al2O3. J. Appl. Phys., vol. 123, pp. 085304 (8 pages) (2018).

M. Maestro, J. Diaz, A. Crespo-Yepes, M.B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. Campabadal, and X. Aymerich. New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM. Solid-State Electron., vol. 115, pp. 140-145 (2016).

L. Sambuco Salomone, J. Lipovetzky, S. H. Carbonetto, M. A. Garcia-Inza, E. G. Redin, F. Campabadal, and A. Faigón. Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors. Thin Solid Films, vol. 600, pp. 36-42 (2016).

A. Rodríguez, M.B. Gonzalez, F. Campabadal, J. Suñe, and E.Miranda. Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates. Microelectronics Reliability, vol. 55, pp. 1442-1445 (2015).

S. Claramunt, Q. Wu, M. Maestro, M. Porti, M.B. Gonzalez, J. Martin-Martinez, F. Campabadal, and M. Nafría. Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM. Microelectron Eng., vol. 147, pp. 335-338 (2015).

M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M.B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, and X. Aymerich. Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages. Microelectron Eng., vol. 147, pp. 176-179 (2015).

A. Rodriguez, M.B. Gonzalez, J. Suñe, F. Campabadal, and E. Miranda. Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates. Microelectron Eng., vol. 147, pp. 85-88 (2015).

A. Rodriguez, M.B. Gonzalez, E. Miranda, F. Campabadal, and J. Suñe. Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices. Microelectron Eng., vol. 147, pp. 75-78 (2015).

M.B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M.C. Acero, M. Nafria, F. Campabadal, and X. Aymerich. Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices. Microelectron Eng., vol. 147, pp. 59-62 (2015).

M.A. Villena, M.B. González, J.B. Roldán, F. Campabadal, F. Jiménez-Molinos, F.M. Gómez-Campos, and J. Suñé. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs. Solid-State Electron., vol. 111, pp. 47-51 (2015).

S. Dueñas, H. Castán, H. García, L.M. Fuentes, L. Bailón, F. Campabadal, J. M. Rafí, M. B. Gonzalez, K. Takakura, I. Tsunoda, and M. Yoneoka. Hole trap distribution on 2 MeV electron irradiated high-k dielectrics. Journal of Vacuum Science and Technology B, vol. 33, No. 3, pp. 032201 (2015).

L. Sambuco Salomone, A. Kasulin, J. Lipovetzky, S. H. Carbonetto, M. A. Garcia-Inza, E. G. Redin, F. Berbeglia, F. Campabadal, and A. Faigón. Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures. J. Appl. Phys., vol. 116, Iss. 17, pp. 174506 (2014).

M. A. Villena, M. B. González, F. Jiménez-Molinos, F. Campabadal, J. B. Roldán, J. Suñé, E. Romera, and E. Miranda. Simulation of thermal reset transitions in resistive switching memories including quantum effects. J. Appl. Phys., vol. 115, 214504 (2014).

M.B. González, J.M. Rafí, O. Beldarrain, M. Zabala, and F. Campabadal. Analysis of the switching variability in Ni/HfO2-Based RRAM Devices. IEEE Transactions on Device and Materials Reliability, vol. 14, No. 2, pp. 769-771 (2014).

Field-effect control of breakdown paths in HfO2 based MIM structures. X. Saura, X. Lian, D. Jiménez, E. Miranda, X. Borrisé, F. Campabadal, and J. Suñé. Microelectronics Reliability, vol. 53, pp. 1346-1350 (2013).

2 MeV electron irradiation effects on the electrical characteristics of MIS capacitors with ALD Al2O3 dielectrics of different thickness. J.M. Rafí, M.B. González, K. Takakura, I. Tsunoda, M. Yoneoka, O. Beldarrain, M. Zabala, and F. Campabadal. Microelectronics Reliability, vol. 53, pp. 1333-1337 (2013).

Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics. J.M. Rafí, M.B. González, K. Takakura, I. Tsunoda, M. Yoneoka, O. Beldarrain, M. Zabala, and F. Campabadal. Solid-State Electronics, vol. 89, pp. 198-206 (2013).

Charge trapping and electrical degradation in atomic layer deposited Al2O3 films. M.B. Gonzalez, J.M.Rafí, O.Beldarrain, M.Zabala, and F.Campabadal. Microelectronic Engineering, vol. 109, pp. 57-59 (2013).

2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon. H. García, H. Castán, S. Dueñas, L. Bailón, F. Campabadal, J.M. Rafí, M. Zabala, O. Beldarrain, H. Ohyama, K. Takakura, and I. Tsunoda. Thin Solid Films, vol. 534, pp. 482-487 (2013).

Threshold switching and conductance quantization in Al/HfO2/Si(p) structures. X. Saura, E. Miranda, D. Jiménez, S. Long, M. Liu, J.M. Rafí, F. Campabadal, and J. Suñé. Japanese Journal of Applied Physics, vol. 52, No. 4, pp. 04CD06 (2013).

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications. L. Sambuco Salomone, J. Lipovetzky, S. H. Carbonetto, M. A. García Inza, E. G. Redin, F. Campabadal, and A. Faigón. Journal of Applied Physics, vol. 113, Iss. 7, pp. 074501 (2013).

Blistering of ALD Al2O3 layers grown on silicon and its effect on MIS structures. O. Beldarrain, M. Duch, M. Zabala, J.M. Rafí, M.B. González, and F. Campabadal. Journal of Vacuum Science and Technology A, vol. 31, No.1, pp. 01A128 (2013).

Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: effects of growth temperature, oxygen source, and post-deposition annealing. H. García, H. Castán, S. Dueñas, L. Bailón, F. Campabadal, O. Beldarrain, M. Zabala, M.B. González, and J. M. Rafí. Journal of Vacuum Science and Technology A, vol. 31, No.1, pp. 01A127 (2013).

Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant. M. B. Gonzalez, J. M. Rafí, O. Beldarrain, M. Zabala, and F. Campabadal. Journal of Vacuum Science and Technology B, vol. 31, No. 1, pp. 01A101 (2013).

2 MeV electron irradiation effects on the electrical characteristics of metal‐oxide‐silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics. J. M. Rafí, F. Campabadal, H. Ohyama, K. Takakura, I. Tsunoda, M. Zabala, O. Beldarrain, M.B. González, H. García, H. Castán, A. Gómez, and S. Dueñas. Solid-State Electronics, vol. 79, pp. 65-74, 2013.