Department of Electronic Engineering
Universitat Autònoma de Barcelona (UAB)
Rosana Rodriguez received the Ph. D. in Electrical Engineering from Universitat Autònoma de Barcelona (UAB) in 2000. Funded by the Fulbright program, she worked on devices and circuits reliability at the IBM Thomas J. Watson Research Center (New York, USA) (2001-2002). Currently, she is associate professor at the Universitat Autònoma de Barcelona.
Her research interests are focused on the electrical characterization and reliability of CMOS devices. She analyses the effect on devices and circuits performance of time-zero and time-dependent variability and the associated failure mechanisms as Random Telegraph Noise (RTN), Bias Temperature Instability (BTI), Hot Carriers Injection (HCI) and Dielectric Breakdown.
Her current research topics include the study of the resistive switching phenomenon in memristors and its applications to memory, logic and neuromorphic systems.