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ChinaRRAM


Prof. Jordi Suñé will participate as an invited speaker in the ChinaRRAM conference organized by Schoochow University in Suzhou.

Volume resistive switching in perovskite oxides

J. Suñé1, R. Ortega-Hernandez1-2,M. Coll2, J. C. Gonzalez-Rosillo2, A. Palau2, X. Obradors2, J. Martín-Martínez, E. Miranda1, and T. Puig2

1Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

2Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193, Spain

*E-mail address of corresponding author: jordi.sune{at}uab{dot}cat phone: (+34)935813527

Bipolar resistive switching (RS) in Ag/CeO2-x/La0.8Sr0.2MnO3/CeO2-x/Ag structure has been used to change the resistance along a La0.8Sr0.2MnO3 (LSMO) conductive track in a non-volatile, tunable manner. Our results demonstrate that RS in these devices is homogeneously extended over the 40nm LSMO layer volume and it is not produced by localized conducting filaments (CFs) neither in the CeO2-x layer nor in the LSMO layer. It is proposed that oxygen exchange between the CeO2-x and the LSMO layers drives a metal-insulator transition (MIT) causing RS in these devices. Our results are supported by previous volume RS effects reported in thin (10nm) La0.7Sr0.3MnO3 layers using conductive- Atomic Force Microscopy (c-AFM) [C. Moreno et al, Nano Lett. 10, 3828 (2010)]. Taking advantage of these phenomena, we report the implementation of a three terminal (3T) gate-controlled device in which the current conduction along the LSMO layer connected by two electrodes is modulated by inducing RS using a third “gate” electrodein a non-volatile, tunable manner.